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Novellus Inova Ta Barrier / Cu Seed Deposition for Sale


SDI fabsurplus.com is pleased to announce the availability of the following listed used Novellus Inova Ta Barrier / Cu Seed Deposition.
Please click on the "Send More Details" button at the end of the Inova description, if you'd like to get more details, photos and specifications of this Ta Barrier / Cu Seed Deposition, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This Novellus Inova Ta Barrier / Cu Seed Deposition is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.


Novellus Inova Equipment Details

SDI ID: 102330
Manufacturer: Novellus
Model: Inova
Description: Ta Barrier / Cu Seed Deposition
Version: 200 mm
Vintage: 01.06.2003
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire
Comments:

This tool is still installed and located in the cleanroom, as shown in the photos attached. The full system configuration and performance information is attached in a PDF.

System Overview
The tool consist of the following main parts:-
A.Equipment in the Fab
1. Inova mainframe (transfer, load, Aligner, cool, degas chm & loadlock) qty 1
2. ASYST LPT2000 SMIF loaders qty 2 (To be retained by the fab)
3. Wafer Handler System consisting of a 3-axis Trust Cntrl ConMag II Robot Assy with Ceramic Blade (Transfer robot)
and an AWC installed Brooks Mag 7 Robot Assy with Ceramic End Effector (FE robot)
4. Process Chambers:
Ta chamber qty 1
Cu chamber qty 1
DMC chamber qty 1

B. Equipment in the Sub-Fab
1. Main Power Distribution Unit qty 1
2. Transformer Unit qty 1
3. AC Control / Generator Rack qty 1
4. Cryo Compressor 9600 qty 4
5. Mydax Chiller qty 1 (To be retained by the fab)
6. Polycold qty 1 (To be retained by the fab)
7. Affinity Chiller qty 1 (To be retained by the fab)
8. Dry Pump qty 4 (To be retained by the fab)

Missing / Faulty Parts List
1. PVD chamber ESC power cable qty 2
2. DMC RF cable qty 1
3. TA RF cable qty 1

 

 

 

SYSTEM SOFTWARE

1

Proteus Ver 2.231 Bld 3

2

QNX Ver 4.71 Bld 3

3

UIProteus

4

ControllerMC1

5

ISIOC Ver 4.69

HARDWARE

1. CIP and Upgrades (over the years)

6

Ta chamber process kit

SST process kit upgrade

7

Ta HCM target

Single coil Ta

8

Damaclean dome shield

Single piece

9

HCM Cu target

3/4" HCM Cu thickwall target

10

ESC chuck

Rev2 No SEMCO layer (Ta/Cu)

11

Degas stn leak chk port (for

front end)

Installed

12

Degas flexline

Upgraded bellow

13

PVD chamber flexline

(Ta/Cu)

Upgraded bellow

14

PVD chamber HCM (Ta/Cu)

Metal strain relief

15

PVD chamber RGA port

NA

16

LoadLock Ion gauge port

extension

NA

17

PVD Chamber Condensation

Control (Ta/Cu)

NA

2. SMIF LOADERS

18

Type/ Model

LPT 2200

3. DUAL LOADLOCKS

19

4-axis Trust Cntrl

Ver 3.4

20

Chord Mapping

Installed

21

Cryo Baffle Plate

Installed

22

Cryo Pumps

CTI Cryogenic 8" F

23

Cryo pumps Compressor

Helix CTI9600

24

Convectron gauge

Granville Philips 275821 Mini-Convectron

 

25

Ion gauge

Granville Philips 354001-YG-T Micro-ion Mod

26

LL Short Light Curtain

Installed

27

PEC cassette nests

Installed

28

Gate Valve Shield Assy

VAT Rectangular Gate Valve MONOVAT Classic with Gate Compl. (Gate Aluminum

with Viton Seal)

4. WAFER HANDLER/ FRONTEND CHM

30

Robot Arm

Ceramic

31

Cryo pumps

CTI Cryogenic 8" F and 4"

32

Cryo pumps Compressor

Helix CTI9600

33

Convectron gauge

Granville Philips 275821 Mini-Convectron

34

Ion gauge

Granville Philips 354001-YG-T Micro-ion Mod

5. DEGAS STATION

35

Degas Station

4pt Mechanical Clamp

36

Aera FC-7800CD MFC 4

Argon

1.0/20

6. COOL STATION

37

Cool Station

Standard

38

Aera FC-7800CD MFC 3

Argon

1.0/100

39

Stage O-ring groove size

0.121-0.124"

7. TRANSFER MODULE

40

Cryo Pump

CTI Cryogenic 8" F

41

Cryo pumps Compressor

Helix CTI9600

42

Robot

AWC installed Brooks Mag 7

43

Robot end effector

Ceramic

44

Lid Cover

Clear Lid

45

Gate Valve Shield Assy

VAT Rectangular Gate Valve MONOVAT Classic with Gate Compl. (Gate Aluminum

with Viton Seal)

46

Convectron gauge

Granville Philips 275821 Mini-Convectron

47

Ion gauge

Granville Philips 354001-YG-T Micro-ion Mod

8. DAMACLEAN MODULE

48

Cylinder Source

Ceramic

49

Gas Box

3 Gas

 

50

RF p/s

Advance Energy RF 10s & LF 10WC

51

Plasma Shield

Stationary

52

Pump

Varian V 701 VT

53

Stage

Non-ESC

54

Shield Kit

Standard DMC non ESC

55

Gate Valve Shield Assy

VAT Rectangular Gate Valve MONOVAT Classic with Gate Compl. (Gate Aluminum

with Viton Seal)

56

Convectron gauge

Granville Philips 275821 Mini-Convectron

57

Ion gauge

Granville Philips 354001-YG-T Micro-ion Mod

58

Manometer gauge

MKS inst 627B.1TBD1B 100mT/0.1

59

Aera F-7800CD MFC 4 H2

1.0/50

60

Aera F-7800CDMFC 1 Ar

1.0/50

9. Ta(N) CHAMBER

61

Cryo Pump

CTI Cryogenic 8" F

62

Cryo pumps Compressor

Helix CTI 9600

63

Ar MFC

Installed

64

N2 MFC

Installed

65

Convectron gauge

Granville Philips 275821 Mini-

Convectron

66

Ion gauge

Granville Philips 354001-YG-T Micro-

ion Mod

67

Manometer gauge

MKS inst 627B.1TBD1B 100mT/0.1

68

Argon BSG manometer gauge

MKS inst 750B11TCB2GA

69

Aera FC-7800CD MFC 3 N2

1.0/200

70

Aera FC-7800CD MFC 1 Ar

1.4/100

71

MKS UPC 1 Ar

1.0/10

SHIELD KIT

72

Assy, Anode, HCM

Arc Sprayed SST

73

Shield Adapter

Arc Sprayed SST

74

Shield Support Ring, RF FF

Ceramic

75

Deposition Shield

Arc Sprayed

76

ESC table shield

Arc Sprayed

 

77

Weight Clamp, RF

Arc Sprayed

78

RF Plug

Ceramic

79

Bottom Shield

Arc Sprayed

80

Gate Valve Shield Kit

Not Installed

SOURCE

81

DC p/s

CPI 36KW

82

D-coil

Not Active

83

M-coil

Active

84

Source Magnet

Array

85

Top Magnet

Rotating No YY

86

Target

Ta

87

ESC power supply

Trek 684-I

TABLE

88

Assy, Table, HCM

Installed

89

Polycold N2 cooling lines

Vacuum-jacketed

90

MKS UPC

Installed

91

Stage

ESC w Active Cooling

92

Heat Exchanger for Chilled N2

exhaust

Not installed

93

Z-table

Ver 2.41

94

RF Ready

Yes

95

Gate Valve Shield Assy

VAT Rectangular Gate Valve MONOVAT Classic with Gate Compl.

(Gate Aluminum with Viton Seal)

10. Cu CHAMBER

96

Cryo Pump

CTI Cryogenic 8" F

97

Cryo pumps Compressor

Helix CTI 9600

98

Ar MFC

Installed

99

Convectron gauge

Granville Philips 275821 Mini-

Convectron

100

Ion gauge

Granville Philips 354001-YG-T Micro-

ion Mod

101

Manometer gauge

MKS inst 627B.1TBD1B 100mT/0.1

102

Argon BSG manometer gauge

MKS inst 750B11TCB2GA

 

MFC

103

Aera FC-7800CD MFC 3 N2

1.0/200

104

Aera FC-7800CD MFC 1 Ar

1.4/100

105

MKS UPC 1 Ar

1.0/10

SHIELD KIT

106

Assy, Anode, HCM

Grit Blasted SST

107

Shield Adapter

Grit Blasted SST

108

Deposition Shield

Grit Blasted, non RF

109

ESC table shield

Grit Blasted, non RF

110

ESC Clamp

Notch, Grit Blasted

111

Bottom Shield

Grit Blasted, non RF

112

Gate Valve Shield Kit

Not Installed

SOURCE

113

DC p/s

CPI 36KW

114

D-coil

Active

115

M-coil

Active

116

Source Magnet

Array

117

Top Magnet

Rotating

118

Target

Cu

119

ESC power supply

Trek 684-I

TABLE

120

Mydax fluid cooling line

Vacuum-jacketed

121

MKS UPC

Installed

122

RF ready

No

123

Stage

ESC w Active Cooling

124

Z-table

Ver 2.51

125

Gate Valve Shield Assy

VAT Rectangular Gate Valve MONOVAT Classic with Gate Compl.

(Gate Aluminum with Viton Seal)

12. AUXILIARY SUBFAB EQUIPMENT

126

Cu Chamber Chiller

MYDAX 1-VLH7-WB

127

Ta Chamber Chiller

POLYCOLD 152-WC-CE/S2

128

System DI water Chiller

Affinity E series chiller EWA-15DK-

 

 

 

GE06CBC0

129

Dry Pumps

Ebara AA-20N (High Efficiency pump)

130

Main Power Distribution

Cutler Hammer cabinet C2/Inova

131

ECR

C2/Inova ECR 208VAC 3 rack

SYSTEM PERFORMANCE SPECIFICATION

132

Equipment Uptime

85%

133

Mean Time Between Failure

(MTBF)

200 Hours

134

Mean Time to Repair (MTTR)

4 Hours

135

Mean Wafer Between

Interrupt (MWBI)

6,500 wafers

136

Mean Wafer Between Wafer

Breakage

15,000 wafers

PROCESS SPECIFICATION

1. PRE-CLEAN SPECIFICATON

 

SPUTTER CLEAN

 

137

Film Thickness Removal

Thermal Oxide

100

138

Test Diameter

194 mm

139

Within Wafer Non-uniformity,

Etch

3 %, 1

140

Wafer-to-Wafer

Repeatability, Etch

1.7 %, 1

141

Etch Rate

>400 /min

142

Mechanical Particle Adders

(average)

10 #>0.16 m

143

In-Film Particle Adders

(average)

25 #>0.16 m

REACTIVE CLEAN

 

144

Film Thickness Removal

Thermal Oxide

0

145

Test Diameter

194 mm

146

Cu2O Reduction Rate at 50C

>2 /min

147

Mechanical Particle Adders

(average)

10, #>0.16 m

148

In-Film Particle Adders

(average)

30, #>0.16 m

2. HCM TA and TA (N) SPECIFICATON

149

Film Thickness

200

 

150

Test Diameter

194 mm

 

151

Within Wafer Non-uniformity,

5 %, 1

 

 

 

Sheet Resistance

 

 

152

Wafer-to-Wafer Repeatability, Sheet

Resistance

1.7 %, 1

 

153

Within Wafer Non-uniformity,

Thickness

5 %, 1

 

154

Wafer-to-Wafer

Repeatability, Thickness

1.7 %, 1

 

155

Ta Bulk Resistivity at 300

170-190 -cm

 

156

TaN Bulk Resistivity at 300

210-240 -cm

 

157

Deposition Rate (at 10KW)

730-840 /min

 

158

Bottom Coverage (0.2

m,A/R=5:1)

>30%

 

159

Sidewall Coverage (0.2 m,A/

R=5:1)

>10%

 

160

Film Mechanical Stress

>-3800 MPa

 

161

Phase (Ta only)

-Ta

 

162

Mechanical Particle Adders

(Average)

10, #>0.16 m

 

163

In-Film Particle Adders

(Average)

30, #>0.16 m

 

3. HCM RF TA and TA (N) SPECIFICATON

166

Film Thickness

172-195

 

167

Test Diameter

194 mm

 

168

Within Wafer Non-uniformity,

Sheet Resistance

8 %, 1

 

169

Wafer-to-Wafer

Repeatability, Sheet Resistance

1.7 %, 1

 

170

Within Wafer Non-uniformity,

Thickness

8 %, 1

 

171

Wafer-to-Wafer

Repeatability, Thickness

1.7 %, 1

 

172

Ta Bulk Resistivity at 190

175-195 -cm

 

173

TaN Bulk Resistivity at 190

220-250 -cm

 

174

Deposition Rate (1st step at

18KW)

730-840 /min

 

175

Bottom Coverage (0.18 m

via,A/R=3:1)

<20%

 

176

Sidewall Coverage (0.18 m

via,A/R=3:1)

>20%

 

177

Bottom Coverage (0.2

m,A/R=5:1)

<10%

 

178

Sidewall Coverage (0.2 m,A/

R=5:1)

>12%

 

 

179

Film Mechanical Stress

>-3500 MPa

 

180

Phase (Ta only)

-Ta

 

181

Mechanical Particle Adders

(Average)

10, #>0.16 m

 

182

In-Film Particle Adders

(Average)

30, #>0.2 m

 

183

Etch/ Deposition Ratio

1.25-1.55

 

4. HCM Cu SPECIFICATON

184

Film Thickness

1000

 

185

Test Diameter

194 mm

 

186

Within Wafer Non-uniformity,

Sheet Resistance

4 %, 1

 

187

Wafer-to-Wafer Repeatability, Sheet

Resistance

1.7 %, 1

 

188

Within Wafer Non-uniformity,

Thickness

4 %, 1

 

189

Wafer-to-Wafer

Repeatability, Thickness

1.7 %, 1

 

190

Bulk Resistivity

2.1-2.5 -cm

 

191

Deposition Rate

1800-2250 /min

 

192

Bottom Coverage (0.2

m,A/R=5:1)

>30 %

 

193

Sidewall Coverage (0.2 m,A/

R=5:1)

>10 %

 

194

Film Mechanical Stress

<200 MPa

 

195

Texture

<111>

 

196

Mechanical Particle Adders

(Average)

10, #>0.16 m

 

197

In-Film Particle Adders

(Average)

12, #>0.2 m

 

 

 

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The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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