Varian VIISta 80HP High Current Implanter for Sale

SDI fabsurplus.com is pleased to announce the availability of the following listed used Varian VIISta 80HP High Current Implanter.
Please click on the "Send More Details" button at the end of the VIISta 80HP description, if you'd like to get more details, photos and specifications of this High Current Implanter, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This Varian VIISta 80HP High Current Implanter is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.

Varian VIISta 80HP Equipment Details

SDI ID: 102460
Manufacturer: Varian
Model: VIISta 80HP
Description: High Current Implanter
Version: 300 mm
Vintage: 01.01.2003
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire

High Current Implanter: Max. Beam Energy 80 keV

Currently deinstalled and warehoused, as shown in the photos. Please check the attachments below for more information.

Varian Semiconductor offers a full suite of single wafer ion implanters covering a wide range of doping and materials modification used in semiconductor applications. All applications use the VIISta Platform . The VIISta platform has enabled the transition from batch to single wafer systems, by providing precise angle control, low defectivity and particle control and high productivity. All VIISta single-wafer, single-platform products utilize a common single-wafer backbone with optimized beam lines for specific ion implantation applications.

-Energy Range 200 eV - 80 keV

Implant Dose Performance:-

Dose Range: 2E12 - 1E16, (4E12 – 1E16 ions/cm 2 - quad mode)
Uniformity: ≥ 10 keV, 1σ ≤ 1.0% mean dose across wafer
500 eV to 10 keV, 1σ ≤ 1 . 5% mean dose across wafer
for optimized anneal
Repeatability: ≥ 10keV, 1σ ≤ 0.7% mean dose of wafers
500 eV to 10 keV, 1σ ≤ 1% mean dose of wafers
Beam Parallelism:± 1o in X and Y axis for ≥ 10 keV drift

Resolution: M/∆M > 60 FWHM

Process Angles:-
Tilt: ±45o; 2 axis; Programable in 1o steps; accuracy ±0.5o
Orientation:0 - 360o; programable in 1o steps; accuracy ± 1o
Rotation: Equivalent multi-tilt, quad mode

Wafer Cooling: Gas cooled electrostatic platen
200mm < 100oC @ 800 W beam power
300mm < 100oC @ 1200 W beam power

Particle Spec: ≤ 0.15 particles added/cm 2 @ ≥ 0.16μm particles (Frontside).
Max. Throughput: More than 250 x 200mm wafer per hour.
                 More than 230 x 300mm wafer per hour.

Wafer Handling: Backside pick and place wafer orientation
Load Ports: Two (2) independent cassette load locks

Wafer Breakage: MWBB 1:100,000

Metal Contamination: Al < 50ppm of implanted dose
Transition and Heavy Metals (Fe, Cr, Ni, Cu) < 5ppm of implant dose

Attachments: 40 Files
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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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