SDI fabsurplus.com is pleased to announce the availability of the following listed used AKT / Applied Materials AKT Applied G6 PECVD 5.7 PECVD.
Please click on the "Send More Details" button at the end of the AKT Applied G6 PECVD 5.7 description, if you'd like to get more details, photos and specifications of this PECVD, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This AKT / Applied Materials AKT Applied G6 PECVD 5.7 PECVD is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.
|Manufacturer:||AKT / Applied Materials|
|Model:||AKT Applied G6 PECVD 5.7|
|Sales Condition:||as is where is|
In Fab - Disconnected, Decontaminated, Deinstalled last indexed: 2021-01-28:15:58:53 pdf link : 5 CH. 25 KAXParameterAMAT specification (10/5/15)Wafer size156mm x 156 mm (239cm2) substrates transported in a carrierCarrier sizeG6 (1500mm x 1850mm) carrier capable of carrying >/=99 wafer/carrierG5 (1200mm x 1300mm) carrier capable of carrying >/=49 wafer/carrierHandlingG6: Robot max payload 60Kg: Capable of handling 5mm graphite carrier (Carrier/wafer 24kg + EE 31Kg)� >12 month lifetime for robot componentsG5: Robot max payload 50Kg: Capable of handling 5mm graphite carrier (Carrier/wafer 14kg + EE 27Kg)� >12 month lifetime for robot components�DepositionAmorphous silicon 40-150 angstrom on waferThru-put per systemG5: >/=70 carriers/hr - 4 chamber config, 1 process step with 144s in recipe time.G6: >/=70 carriers/hr - 5 chamber config, 1 process step with 221s in recipe time.Thru-put per LLG6 (TSSL): >/= 70 carrier/hr with venting time < 40secG5 (TSSL): >/= 70 carrier/hr with venting time < 40secProcess sequencesequential run for i and n layer, and individual run for othersSubstrate Exit Temperature<100CBase pressure<10m Torr (AMAT's STD pump base pressure, in process chambers)CVD Chamber Rate of Rise<1.0mTorr/min,� AMAT STDPressure control0.2 to 5TorrDeposition Requirements for a-Si layerParameterAMAT for G5 toolGas flowSiH4(high), SiH4(low), H2(high), H2 (low), B2H6/H2, CH4, Ar, NF3, N2Generator PowerMax power 3KW, plasma sustainable at the power density > 150W/m2 for 40MHz�Deposition Temperature150C-300CHeater Temperature Uniformity< +/-10C (AMAT STD spec, on glass w TC)Deposition Requirements for a-Si layerParameterAMAT for G6 toolGas flowSiH4(high), SiH4(low), H2(high), H2 (low), PH3/H2, Ar, NF3, N2, B2H6/H2 (Total 9)Generator PowerMax power 5KW, plasma sustainable at the power density > 150W/m2 for 13.56MHz�Deposition Temperature200-300CTemperature Uniformity< +/-10C (AMAT STD spec, on glass)
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