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Oxford Instruments OpAL Laboratory ALD tool used for Al2O3 deposition for Sale


SDI fabsurplus.com is pleased to announce the availability of the following listed used Oxford Instruments OpAL Laboratory ALD tool used for Al2O3 deposition.
Please click on the "Get Quote" button at the end of the OpAL description, if you'd like to get a quotation, photos and specifications of this Laboratory ALD tool used for Al2O3 deposition, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This Oxford Instruments OpAL Laboratory ALD tool used for Al2O3 deposition is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.


Oxford Instruments OpAL Equipment Details

SDI ID: 112600
Manufacturer: Oxford Instruments
Model: OpAL
Description: Laboratory ALD tool used for Al2O3 deposition
Version: up to 200 mm
Vintage: 01.06.2016
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire
Comments:

-installed and operational
-COMPLETE, NOT MISSING ANY PARTS, AND WILL BE SOLD WITH ALL ACCESSORIES
The Oxford OpAL is a plasma or thermal assisted atomic layer deposition (ALD) tool used to deposit Al2O3
Complementing the company's load-locked FlexAL ALD process tool, the OpAL offers a compact open-loading system based on OIPT’s Plasmalab80Plus process tool platform. Capable of handling the processing of full 200 mm (8-inch) wafers down to small wafer pieces, the OpAL is designed for both academic and industry R&D. The base thermal ALD system can be upgraded with a remote plasma ALD source, which allows for the widest possible choice of precursor chemistry with enhanced film quality; plasma enables low-temperature ALD processes while the remote source maintains low damage. Liquid or solid precursors can be heated to 200°C and bubbled with argon, and are housed inside an extracted stainless steel cabinet providing safe management of hazardous precursors, located within the tool to minimise delivery line length.
Capabilities
Highly conformal and uniform metal-oxide thin films with no pinholes
Slow growth rate with monolayer-level thickness control.
Single open-loop vacuum chamber with heated table and heated sidewalls
Heated table can run 80-300ºC
Two metal-organic bubbler channels with jacket heaters and millisecond-firing ALD valves. (One channel dedicated to Al2O3.)
- Typical layer thicknesses are between 1-50 nm
- (Extreme) high surface topologies
The deposition of ultrathin layers with (plasma-assisted) atomic layer depostion (ALD) techniques: Materials, such as Al2O3, TiO2, HfO2, Ta2O5, Er2O3.
Input of samples without loadlock.
Optional monitoring available with in-situ spectroscopic ellipsometry, mass spectroscopy and optical emission spectroscopy during process.
Downstream 300 W RF plasma head with isolation valve
Software to run loops of dose/purge cycles to enable ALD

Tools Specific data:-
Software Version PC2000 2.50.124.0


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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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