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Innolas ILS 700P Laser Edge Isolation for Sale


SDI fabsurplus.com is pleased to announce the availability of the following listed used Innolas ILS 700P Laser Edge Isolation.
Please click on the "Get Quote" button at the end of the ILS 700P description, if you'd like to get a quotation, photos and specifications of this Laser Edge Isolation, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This Innolas ILS 700P Laser Edge Isolation is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.


Innolas ILS 700P Equipment Details

SDI ID: 56141
Manufacturer: Innolas
Model: ILS 700P
Description: Laser Edge Isolation
Version: 156 mm
Vintage: 01.11.2006
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire
Comments:

Innolas Laser
Currently in storage in Port Klang, Malaysia.
s/n P329
Operational prior to de-installation
In-line with Baccini Solar Cell Line 156mm Solar Cell line
Single Lane process
Description: Photovoltaic Industry Laser
Spesifications: for Processing of Monocrystalline and Polycrystalline Silicon Solar Cells Tool for Use in Photovoltaic Laser Applications
Examples for Processing Techniques:
Laser Edge Isolation
Laser Fired Contacts
Micro via Hole Drilling
SiN-Ablation/SiO2-Ablation
Downsizing
Surface Modification
Laser Scribing
Surface Restructuring
This Innolas ILS 700P system has been used exclusively in production for laser edge isolation of solar cells.
Basically, the need for edge isolation arises from the ion doping/diffusion step of the c-Si cell manufacturing process, in which a shallow (~μm’s) layer of the bulk p-type silicon is infused with negatively doped ions (Phosphorus Doping). This doped region surrounds the entire wafer, and causes electrical shunting between
the front and back electrical contacts without the isolation scribe.
Laser edge isolation is typically achieved by scribing a groove around the perimeter of the solar cell, as close to the edge of the wafer as possible. The groove depth must extend some distance beyond the ion diffusion layer in order to give the best result. Typical groove dimensions are 20–40 μm wide x 10–20 μm deep.

This system is fitted with a Coherent Avia-355-X laser, which has a nominal repetition rate programmable between 40 kHz and 120 kHz and a short pulse width in the ns range, which when coupled with high-speed scanning galvanometer technology, achieves edge isolation times  in the 1–2 second range for 156 mm wafers. Depending on the system optical design (spot size, etc.), isolation scribes can be machined at speeds from 500–1000 mm/sec or higher.
208V, 3 Ph, 50/60 Hz, CE
Crated, in warehouse, can be inspected by appointment
Weight and dimensions:-
item #30 Innolas main body 330 cm x 220 cm x 190 cm weight kg 2000
item #13 UI of innolas 68 cm x 60 cm x 265 cm weight  kg 20


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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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