Canon FPA 5000 ES2+ 248 nm lithography exposure system for Sale

SDI fabsurplus.com is pleased to announce the availability of the following listed used Canon FPA 5000 ES2+ 248 nm lithography exposure system.
Please click on the "Send More Details" button at the end of the FPA 5000 ES2+ description, if you'd like to get more details, photos and specifications of this 248 nm lithography exposure system, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This Canon FPA 5000 ES2+ 248 nm lithography exposure system is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.

Canon FPA 5000 ES2+ Equipment Details

SDI ID: 68025
Manufacturer: Canon
Model: FPA 5000 ES2+
Description: 248 nm lithography exposure system
Version: 200 mm (300 mm also possible with conversion kit)
Vintage: 01.06.2000
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire

High NA covers 0.18 um to 0.15 um design rules using 248 KrF illumination. The wafer size can easily be changed between 200 mm and 300 mm with a simple conversion kit.
The Platform features a reaction force receiver on both the reticle and wafer stages. Active dampers are added to the wafer stage to prevent machine vibrations from occuring via the fab floor. This allows much higher exposure speeds.
The stage features frictionless air bearings and improved vibration isoltation. The wafer stage is of the new FLAT II design.
The bar mirrors are hollow and the tilt plate is constructed with beams.
This virtually eliminates mirror sag, and allows the stage weight for the 300 mm stage to remain about that of the previous models 200 mm stage.
The lenses are assembled using Ultima PM1 data to minimise aberrations.
 Deinstalled, warehoused
s/n 0096071
Alignment laser: Zygo Laser 6mm zygo p/n 8070-0102-05 Model 7702 Date March 2000 CE MARKED
Robot type 6735A
Power 200V 3 phase 2W, 1PE, 6.9 kva and 19.8 kva
main unit weight 12260 kg *Scanner and environmental chamber)
TCU 750 kg
Laser and delivery optics 1557 kg
Power box 100 kg
Reduction ratio 4:1
Resolution 0.15 um
illumination 248 nm (KrF)
Image field size 26 mm x 33 mm
reticle 6 inch square, 0.25 inch thickness
Alignment - TTL off axis imaging and off axis imaging overlay accuracy better than 35 nm
Through put better than 125 wph for 8 inch wafers
Main body dimensions 230 cm w x 325 cm d x 280 cm height.
Location: Warehoused in Boerne, TX 78006 USA

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Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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