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SIGMAMELTEC MRC 9000 Gen 2 Advanced Mask Cleaner for Sale


SDI fabsurplus.com is pleased to announce the availability of the following listed used SIGMAMELTEC MRC 9000 Gen 2 Advanced Mask Cleaner.
Please click on the "Get Quote" button at the end of the MRC 9000 Gen 2 description, if you'd like to get a quotation, photos and specifications of this Advanced Mask Cleaner, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This SIGMAMELTEC MRC 9000 Gen 2 Advanced Mask Cleaner is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.


SIGMAMELTEC MRC 9000 Gen 2 Equipment Details

SDI ID: 113281
Manufacturer: SIGMAMELTEC
Model: MRC 9000 Gen 2
Description: Advanced Mask Cleaner
Version: Reticle / Mask
Vintage: 01.11.2022
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire
Comments:

For immediate sale by Fabsurplus.com on behalf of our client.

The Applied Materials® Sigmameltec® MRC 9000 Mask cleaner ( 2nd Generation) has been designed to provide flexible cleaning for the most advanced photomasks currently used for 193 nm lithography and EUV (Extreme Ultraviolet) lithography.
The advanced masks used at these nodes require more careful cleaning in order not to damage the masks and contaminate the cleanroom environment.
Previous agressive chemical cleans are no longer suitable and instead, gentler but more scientifically directed cleaning techniques are used, including the use of high frequency megasonics for removing smaller particles and cleaning the reticle surface better.

The MRC 9000 system allows mask makers to choose from a range of cleaning methods including a plasma chamber for stripping resist and residual organics with 2 wet cleaning chambers and a separate wet process robot which allows the final cleaning step to be separated from initial chemical cleaning step. Available chemicals include ozonated water, CO2 water, hydrolyzed water combined with TMAH, sulfuric-peroxide mixture and SC-1.

Overview of available capabilities:    

-Downstream plasma for removing organic materials including carbon contamination on EUVL masks.
-Separated process between the two wet chambers (Chemical Cleaning Chamber and Final Cleaning Chamber) to improve cleaning performance.
-High frequency megasonic with “acoustic brush” effect to detech contaminant particles without damaging the pattern on the mask.
-A Linear slot nozzle for a constant flow of ozonated cleaning water , together with UV irradiation for removing of organics.
-High Powered UV Module for Surface preparation (Wettability Control).
-High-speed impact nozzle with very fine droplets of a wide range of chemistries for high performance particle removal.
-Vacuum bake chamber.
-Variable Frequency Megasonic puddle clean
-Backside Megasonic allows the complete cleaning of the masks without flipping.
-Removal of Sulfate and Ammonium Ions to reduce haze formation on advanced DUV masks.
-Advanced Resist Strip and Final Clean System.
-Leading edge technology for removing organics, inorganics and particles.
-Can be used on Binary and PSM masks.
-With Dip Module
-With Single Spin Module
-ICP Plasma cleaning with water vapor for organics removal without damaging the masks.

Features of the UV Module:-
-VUV irradiation
-Uniform exposure
-Wavelength: 172 nm
-Power >40 mW/Cm2
-Process gases can be introduced with MFCs such as N2, O2 etc.
-The distance from the chamber to the UV source can be varied.

This mask cleaner was shipped brand new and unused from the manufacturer via air freight to the consignee in December 2022. It came packed in 7 crates and, during unpacking, they noticed that the contents of the 2 crates containing the Main Body Wet Clean Unit and the Main Body Chemical Supply Unit displayed cracks on the plastic housing of the body (See attached photos).
 
All 7 crates appeared visually undamaged. However the shock indicator on Crate 2, which contained the Wet Cleaning Unit, was triggered.
Visual inspection to all equipment installed inside both of these units with cracked frames (tanks, pipes, mass flow instrumentations, handling Robot, etc), displayed no evidence of damage to these internal parts .
It was observed that one item in the chemical supply unit (appeared to be a filter) was dislodged from its original position. No other visual damage was identified.

A copy of this damage report is available on request.

The unit has not been installed, and remains completely new and unused at the facility of our client, where it can be inspected by appointment.

All parts of the system are included in the sale and include the following:-

CRATE 1 NPN-MRC9000-SYS Main Body, Dry Cleaning Unit
CRATE 2 NPN-MRC9000-SYS Main Body, Wet Cleaning Unit
CRATE 3 NPN-MRC9000-SYS Main Body Chemical Supply Unit
CRATE 4 NPN-MRC9000-SYS O3 Water Supply Unit
CRATE 5 NPN-MRC9000-SYS Power Box
CRATE 6 NPN-MRC9000-SYS Vacuum Pump, Chiller, Critical Parts
CRATE 7 NPN-MRC9000-SYS Other parts

Customs HTS: 848640000

Main Tool Configuration/Layout
(See attached diagram)

Process Specification

 

A. STRIP PROCESS        
  PROCESS SPECIFICATION CONDITION      
1 Residual Soft Defect on clear, <= 50 each for >= 0.06 um, Test on HP25K (25uC) or SMN-03A (45uC) 1700A,      
  with 90% yield 200 nm L/S pattern, 1:1 pitch (dense),      
    Residual soft defect (>= 0.06 um).      
    Measurement done on KLA637 P55 StarLight      
2 Phase impact < 0.3 Degrees per clean        
3 Transmission impact < 0.03% per clean        
4 CD Impact: CD mean <= 0.1 nm per clean (Average) Measurement Area: < 132 mm2      
  CDU <= 0.5 nm (3 sigma) per clean        
5 >40 nm SRAF damage <= 1% Use 193 MoSi layer, A/R <2 pattern      
           
B. FINAL CLEAN PROCESS        
  PROCESS SPECIFICATION CONDITION      
1 Residual Soft Defect on clear, 0 each for >= 0.07 um,        
  with 90% yield Soft Defect on clear before final clean < 100 each      
  <= 5EA FOR 0.05 um < soft defect < 0.07 um, Measurement done on KLA637 P55 StarLight      
  With 90% yield        
2 Phase impact < 0.3 Degrees per clean        
3 Transmission impact < 0.03% per clean        
4 CD Impact: CD mean <= 0.1 nm per clean (Average)        
  CDU <= 0.5 nm (3 sigma) per clean        
5 >40 nm SRAF damage <= 1% Use 193 MoSi layer, A/R <2 pattern      
6 Chemical residue SO4-- < 1 ppb, NH4+ < 3 ppb IC Measurement      
    Initial Residual Ion Conc. Before test >= 10 ppb      

Detailed System-Specific Configuration:-

-2nd Generation MRC9000 Mask Cleaning System
-2 X Versaport Load/Unload units
-2 X clean chamber - Excluding LSN and VI Nozzle.
-1 X ICP Chamber
-1 X 6 slot buffer module
-1 X dry/wet flip
-1 X Chemical Supply Unit , with Organo H2W Generator Included
-1 X O3 supply unit
-2 X Chillers, for Clean and ICP Chambers
-1 X Power Box
-1 X Vision Sensor System
-1 X MTTR improvement kit

Detailed Functionality
Chamber 1
1. CHB1 Arm 1 - Straight Nozzle - Chemicals: CO2W, O3W, Hot CO2W, including 3 line independent supply, CO2W conductivity: 50-100 uS/cm, O3W concentration: 60 ppm, Hot CO2W: 80 C Maximum.

2. CHB1 Arm 1 - Dual Jet MS (3.5 MHz) with Chemicals: TMAH-H2O2-H20, SC1, H2W, CO2W, including MS Power: 35 W Max, Will employ closed control loop for conductivity control. Need control range of conductivity.
TMAH-H2O2-H20 (Need conductivity for design work.)
SC1 (Need conductivity for design work.)

3. CHB1 Arm 2 - SPM -Chemicals - Warm SPM (Temp. 25C to 70 C, 10:1 -to 3:1), Temperature Control
                          - Hot SPM (Temp. 90C to 120 C, 10:1 -to 3:1), Without Temperature Control
                          - Hot CO2W 80 C

4. CHB1 Arm 3 - Puddle MS 3 MHz with hole - Chemicals: - TMAH-H2O2-H20 - Condition is same with Arm 1 (Dual Jet MS - 3/5 MHz )
                                                  - SC1
                                                  - H2W
                                                  - CO2W

5. CHB1 Backside - Backside MS 1.5 MHz - Chemicals: - TMAH-H2O2-H20 - Condition is same with Arm 1 (Dual Jet MS - 3/5 MHz )
                                                  - SC1
                                                  - H2W
                                                  - CO2W

6. CHB1 Backside - Backside Nozzle - Chemicals: - Hot CO2 Water - Condition is same with Arm 1 (Straight Nozzle )
                                                  - O3W
                                                  - CO2W
7. CHAMBER 2
CHB 2 -Same as Chamber 1

8. Wet Robot - Only for wet flip, not for transport of masks - qty 1

9. DRY
a. ICP - CHEMICALS: o2, n2, h2o, h2/n2 - with mask sensor
b. COOL - Still remain for ICP - Cool - Unload
c. FLIP
d. Buffer - 6 slot - qty 1
e. Robot - Mechanical transport
f. Loader - Unloader - Versaport - qty 2

Chemical dosing pumps type: Grundfos DDA

Other sub-units:-
-CHEMICAL SUPPLY UNIT -With H2W unit inside
-O3W supply unit -Type: MKS Liquozon VariO3
-Vacuum Pump: Ebara
-Chiller 1 - SMC
-Chiller 2 - ??
-Power Box



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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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