FSI Mercury MP WET ETCH Chemical Clean for Sale

-Still installed and shut down in the fab 
-Was Running wafers Up until May 2025
-Set up for Open 6 inch wafer cassette loading 
-Can be inspected by appointment 
-Configuration and photos are available on request

Convertible to 8 inch wafer size: Yes

CHEMICAL 1 HYDROGEN PEROXIDE
CHEMICAL 2 AMMONIUM HYDROXIDE
CHEMICAL 3 HYDROCHLORIC ACID
CHEMICAL 4 HYDROFLUORIC ACID
CHEMICAL 5 SULFURIC ACID 96%
CHEMICAL 6 DI MIX

System Overview: Acid Spray Process System
Wafer Specification
Wafer Size: 150 MM (6 INCH)
Cassette Type: 25 slots,150 mm
Tool load: Max 6 cassettes

Drying method
Dry IN Dry OUT


FSI's surface conditioning products perform cleaning, etching and stripping functions necessary for the fabrication of semiconductor devices. 

Spray Processing Systems  
FSI's spray processing systems, which include the MERCURY® and ZETA[tm] surface conditioning systems, are sophisticated spray chemistry systems used to clean, etch and strip wafers at various stages in the semiconductor device fabrication process. These systems use centrifugal spray technology to process wafers by exposing them to a programmed, sequenced spray of fresh chemicals inside a closed, nitrogen filled chamber. Cassettes filled with wafers are loaded into a turntable in the process chamber and the processing chemicals, deionized ("DI") water and nitrogen, are sequentially dispensed into the chamber through one or more spray posts mounted in the chamber. As the turntable rotates, nozzles apply a chemical spray to the wafers' surfaces. After chemical application, DI water is sprayed on the wafer surface and all surfaces of the process chamber to remove chemical residues. The wafers and chamber are then dried by centrifugal spinning combined with a flow of nitrogen into the chamber. FSI's spray processing systems include a microprocessor- based controller to program, control and monitor the operating functions of the system in order to ensure precise control and repeatability of the process.
Particle removal is a major issue in wafer surface preparation. With the development of ICs with 0.18-µm (and smaller) feature sizes, even very small (sub-0.1-µm) particles on devices can have a detrimental effect on overall device yield.1 Particle removal is not only an essential process but also a sophisticated one. In sensitive back-end-of-line applications, for example, it has to be performed using techniques that, while eliminating particle defects, leave the remainder of the surface intact and undamaged. 
The most commonly used processes for particle removal are wet-chemical cleans, ("wet-cleans"), which are typically variants of the original RCA-clean.2 Wet-cleans are usually not performed for particle removal alone, but for removal of a variety of residues, including organics and oxide. One such cleaning sequence is the FSI B-Clean3 involving Piranha (H2SO4/H2O2), dilute HF, SC1 (NH4OH/H2O2/H2O) and HPM (HCL/H2O2) chemistries. The process removes organics, etches oxide (and in doing so removes particles adhering to the oxide surface), grows an oxide passivation layer and removes any residual metal contamination. Wet-cleans can be performed in a variety of tools such as wet-benches, spray processors and immersion systems. Cleaning processes have also been developed that combine RCA-based chemistries with acoustical-mechanical techniques such as megasonic excitation,4 for improved cleaning.