Technical Specification Vertical In-Line Sputtering Machine
TYPE: NAR 1200 L
Cycle time: 40sec
Mo-Al-Mo Application
Glass size: 730mm x 920mm

1 APPLICATIONS
To meet the present and future demands of LCD / TFT manufacturers, AKT America Inc. has designed and developed a vertical In-Line sputtering system, called NEW ARISTO. With the NEW ARISTO FAMILY, single and multiple layers can be coated on large glass substrates
The following features characterize the machine concept:
Modular design of the chambers
Full range of process options: e.g. heating, cooling, sputtering, glow discharge
Superior vacuum
Small footprint in the industry
High productivity due to fast cycle time.
Very high collection efficiency
Ease of maintenance
High uptime
Low particle generation resulting in a superior cost of ownership

4	PROCESS DATA
4.1	Vacuum Data Ultimate pressure* by the:
	Entrance / exit chamber	 2 E-02 hPa
	Transfer chamber	 5 E-06 hPa
	Process chamber	 5 E-06 hPa

2. Layer Data

1. Properties of Al single layer

All data are based on glass

Layer Material	Al	Units
Layer Thickness:	2500 ± 10%	Å
Thickness Uniformity within substrate ≤±	5	%
Thickness Uniformity within carrier ≤±	5	%
Average resistance ≤ (as annealed)	0.14	Ω
Uniformity of resistance (on spec value) ≤±	5	%
Reproducibility from carrier to carrier ≤±	5	%

1. Properties of Mo single layer

All data are based on glass

Layer Material	Mo	Units
Layer Thickness:	250 ± 10%	Å
Thickness Uniformity within substrate ≤±	5	%
Thickness Uniformity within carrier ≤±	5	%
Average resistance ≤ (as annealed)	10.0	Ω
Uniformity of resistance (on spec value) ≤±	5	%
Reproducibility from carrier to carrier ≤±	5	%

NOTE: max. Mo thickness: 500A

Target Material see Attachment 13.10

Glass specification Corning E2K Display Grade or equal

2. Productivity

Throughput: 180 Substrates/h (2 Substrates / carrier) Target utilization: ≥ 40% in average over all targets

2. Cycle Time

All mechanical operations, move of carriers, pump down, venting and process speed are optimized to meet a cycle time of 40sec.

The process data described in chapter 4.2 and 4.3 have to be achieved under a cycle time of 40sec.

4. TECHNICAL DATA

1. Dimensions of Machine

   • Required floor space in the gray room area for the machine (chamber, roughing pump sets, cabinets, service zone, w/o atmospheric handling) approx.: 19m x 7m x 4m (l x w x h)

2. Substrate Carrier

• Substrate Dimensions: 730mm x 920mm x (0.4 / 0.5 – 1.1) mm

• Material: TBD

• Carrier Dimensions: approx. 1800 mm length approx. 1718 mm height

• Carrier loading capacity: two substrate

• No masking

1. Vacuum Measuring Equipment

for vacuum chamber:

• Pirani vacuum meter

Range: 10³ hPa to 1*10^-3 hPa

• Ionization gauge

Range: 10^-2 hPa to 1*10^-9 hPa

in addition for each cathode :

• Capacitance vacuum meter sensor head Range: 10^-2 hPa to 10^-4 hPa

2. Pumps and Power Supplies

• High vacuum pump set: Turbo-molecular pump Shimadzu TPH1503

• Rough vacuum pumps: AMAT P1000LL plus WSU 2001

AMAT S400 plus WSU 2001

• Mo cathode*: DC power supply ADL 45 KW + 25kW

• Al cathode*: DC power supply ADL 45 KW + 25KW

*Max power of cathode will be limited to 40kW via Software limit.

3. Sputter Cathodes Cathode

   • Type of cathode: Planar Cathode

• Material of backing plate: Ti, water cooled

• Magnetic field: Move Mag

• Target fixing: Bonding

1. Heater System

• Heating chamber equipped with resistance heater which emits IR radiation

• Mode of operation: PID regulation Shielding

• Shielding material is stainless steel

• Shielding surface is designed and manufactured with a high sticking coefficient to prevent particle generation.

• Transfer- and buffer modules which are installed adjacent to process modules are partly covered with shielding to avoid coating of the chamber walls. This shielding set is not considered as a consumable and is not part of the additional operational parts.

• Substrate temperature distribution: 100°C ± 15 °C

1. Machine performance (required system utilities)

• Electric power: 3 phases, 400 V +-10 % 50/60 Hz, five wires

(3 AC, N, PE)

• Power consumption: TBD

• Cooling water specification

  • pressure min/max.: 5/7 bar absolute

  • max. back pressure: open drain

  • water inlet temperature range: 18 - 25 C

  • selected temperature level should

be kept constant within: ± 2 °C (for TMP’s only)

• hardness of water: 6 - 8 °dH (equivalent 107 - 143 ppm CaCO₃)

• electric conductivity: 100 - 200 µS/cm

• pH-value: 8 - 10

• foreign particles size: max. 100 µm

• foreign particles

concentration: max. 10/cm³

• dissolved Cl: max. 20 mg/l

• dissolved CO₂: max. 15 mg/l

• Water consumption TBD

• Compressed air

Pressure min/max.: 6/8 bar absolute

• Sputter gas: Argon

• Purity of sputter gas: 99.999 %

• Venting gas: Nitrogen or dry compressed air

  • dew point  - 30 °C

  • pressure max. 1.5 bar absolute

• Ambient requirements

  • for temperature at machine and

machine control room: 20 - 30°C

• for relative humidity:  60 %

SYSTEM LAYOUT AND PHYSICAL DIMENSIONS INCLUDING KUKA LOADING ROBOT AND CLEANING SYSTEM:-