Riber ® MBE 32 Molecular Beam Epitaxy system for R and D for Sale

SDI fabsurplus.com is pleased to announce the availability of the following listed used Riber ® MBE 32 Molecular Beam Epitaxy system for R and D.
Please click on the "Get Quote" button at the end of the MBE 32 description, if you'd like to get a quotation, photos and specifications of this Molecular Beam Epitaxy system for R and D, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This Riber ® MBE 32 Molecular Beam Epitaxy system for R and D is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.

Riber ® MBE 32 Equipment Details

SDI ID: 106868
Manufacturer: Riber ®
Model: MBE 32
Description: Molecular Beam Epitaxy system for R and D
Version: Laboratory
Vintage: 01.03.1999
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire

-Currently deinstalled, and has been dis-assembled
-Sold strictly "as is", EXW terms.
-Buyer responsible for any required decontamination.
Vintage: Mar 1999
RIBER 32 for As-III-based semiconductors
Using this equipment, layer structures can be built up for semiconductors based on group III arsenides [GaAs(N,Sb), InGaAs(N,Sb), AlGaAs(N,Sb)], with atomic resolution (individual atomic layers in various materials) and with highly precise control of flatness and thickness. This enables quantum well and quantum dot devices to be made.
The equipment allows many different devices to be developed, such as light emitters (LED, LASER, Single photon emitters), filters, modulators, diodes, transistors or light detectors. It is the basic equipment where material is made which is used in the remaining processes and, therefore, is the beginning of the entire manufacturing chain for any electro-optical device.
Apart from making light emitters and photodetectors, the equipment is highly suited for use in quantum communications, as it is capable of making light emitting and detecting structures that are essential for this type of communications. Depending on the type of materials used, its wave length in use extends from 620nm up to approximately 20 µm in the IR-visible.
Area of application: Electronics, Optics, Optoelectronics, Quantum communications.
The key advantage of growth with MBE is that its resolution is +/- 1 atomic layer (approximately +/- 5 nm) It has several systems for monitoring material quality in-situ. Amongst them, one of the highlights is RHEED (Reflection High Energy Electron Diffraction) which enables analysis of the crystal's growth facet while progressing and assessing its quality, growth speed and thickness, as well as detecting the appearance of quantum dots on the surface.

Substances run and modules present:
Sb Cracker
As Cracker
P Cracker
Sb Bulk
As Bulk
P Bulk
Tubos: Pfeiffer
Temp controllers: Elterm24
Cryo Pumps: CTI 9600 with Onboard 8
See attached photos for details of the current condition. Inspection is welcomed by appointment.

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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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