LPE PE106A Silicon Carbide Epitaxial (EPI) Reactor for Sale

This equipment was installed in the fab, but never used. It was de-commissioned by the OEM and removed to warehouse storage in April 2026.
Configuration:
Argon Line
H2 Line
SiHCl3 (Silicon Source) with bubbler and thermal controller
N-type dope line
C2H4 Elylene Carbon Source
(CH3)3Al (Trimethyaluminium)
HCl line
TCS Bubbler Cabinet

Packing List
1. Carriage module
2. Reactor Module
3. Power generator
4. 1 x Trolley for PC
   2 x UPS
   1 x PC and Monitor
   1 x Coaxial cables
   2 x Panel reactor

5. 1 x Set of reactor quartz / graphite

6. 1 x Vacuum Pump Ebara

7. 1 x Bubbler STD Cod. 16G702/R-3061

8. 1 x Thermo Chiller

9. 1 x Reaction Chamber

10. 1 x Cabinet Bubbler

https://www.lpe-epi.com/products/pe1o6a/
SILICON CARBIDE EPITAXIAL REACTOR PE1O6A
GENERAL DESCRIPTION

    Single wafer 150mm epitaxy reactor
    Hot wall inductive heating
    Three-zone gas injection system
    Load lock for inert purge between runs
    Smallest footprint

 
UNMATCHED PROCESS FLEXIBILITY

    Thin , thick and super thick epitaxial layers
    Multilayer (p and n) in one run
    Reduced pressure process capability

 
THROUGHPUT

    Hi temperature robotized handling
    Industry’s shortest heat up / cool down
    High growth rate
    Lowest CoO


    Excellent thickness control <1% and dopant uniformity <2%; 
    High grow rate up to 60 µm/hr; 
    High productivity including long time between preventive maintenance;
    High reliability and repeatability;
    Small compact footprint. 

 
Major applications 

    SiC epitaxy for power device transistors; 
    SiC epitaxy on bare wafers.