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Centrotherm E 2000 HT 320-4 Nitride Diffusion Furnace for Anti-reflective coating PECVD for Sale


SDI fabsurplus.com is pleased to announce the availability of the following listed used Centrotherm E 2000 HT 320-4 Nitride Diffusion Furnace for Anti-reflective coating PECVD.
Please click on the "Get Quote" button at the end of the E 2000 HT 320-4 description, if you'd like to get a quotation, photos and specifications of this Nitride Diffusion Furnace for Anti-reflective coating PECVD, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This Centrotherm E 2000 HT 320-4 Nitride Diffusion Furnace for Anti-reflective coating PECVD is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.


Centrotherm E 2000 HT 320-4 Equipment Details

SDI ID: 98722
Manufacturer: Centrotherm
Model: E 2000 HT 320-4
Description: Nitride Diffusion Furnace for Anti-reflective coating PECVD
Version: Up to 300 mm
Vintage: 01.05.2008
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire
Comments:

Manufacturer: Centrotherm
Model: E2000 HT 320-4
Serial number: 1_46434.18
Power Input PMax: 60 kW
Current Input IMax: 90A
Input Power Rating: 3/N 380/220V 50 Hz
UPS Power Input PMax: 10kW
UPS Current Input IMax: 25A
UPS Input Power Rating: 3/N 380/220V 50 Hz
Total number of Horizontal Furnace tubes which can be installed: 4
Number of tubes actually installed: 2

Heating Cassette Nos.: 9774 and 9775
Model: White John 600 Celcius
Serial Number and date: 46434 / 12-Jan-2008
Mechanical Type: 124155
Complete type: 236991
+O1-E1 and +O2-E1
Tube temperature measurement model type: Centrotherm TMM6
RF Generators for the plasma generators:
Advanced Energy AE PEII5K Model No. 3157601-100 M O/P 1100V 5 KW 40 KHZ qty 2
Centrotherm TMM6 6 channel temperature measuring module
-MFCs:
HORIBA-STEC SEC-Z524MGXN N2 15 SLM MFG No. 34 7008 6572
HORIBA-STEC SEC-Z524MGXN N2 30 SLM MFG No. 34 1075 9391
HORIBA-STEC SEC-Z514MGX  N2  3 SLM MFG No. 34 1049 2704
HORIBA-STEC SEC-Z524MGXN N2 15 SLM MFG No. 34 3765 0802
HORIBA-STEC SEC-Z524MGXN N2 30 SLM MFG No. 34 7814 0083
HORIBA-STEC SEC-Z524MGX  N2  3 SLM MFG No. 34 2273 6851
Gases Plumbed: N2, N2NO, SiH4, NH3
Gate Valve Type: VAT 61236-PEAP-AIG1/0162
Gas Box PC Controller Type: Siemens Simatic Microbox PC Cesar 186268 qty 2
Centrotherm REG97 p/n 193399 qty 2
Gasbox Valve Controller type: SMC
Temperature controllers:
Beckhoff CX1000-0011
Beckhoff CX1000-COOL
Beckhoff CX1000-0007
Beckhoff CX1000-????
Network controller: Phoenix Contact FL Switch 16TX
Software Type: Windows XP

Generic Specification of the Centrotherm E2000 Horizontal Production Furnace

The design of the centrotherm E 2000 system supports the multiple process capability needs of a maximum capacity, high process performance user and provides all the features of full production in a full size, easy-to-maintain, safe and reliable horizontal furnace platform. The centrotherm design is outstanding for high performance, small footprint and low cost of ownership while offering high process flexibility required for multiple applications.

Processes Options Available for the Centrotherm E2000:
Atmospheric Processes:
Diffusion
BBr 3 -, B 2 H 6 -Doping
POCl 3 -Doping
H 2 -, N 2 -Annealing
Wet-, Dry-Oxidation [Option: DCE, HCl]
Curing
Activation Annealing
Silicidation
Nitridation
Contact Sintering

LPCVD Processes:
Polysilicon
Polysilicon-Doping
Silicon Nitride
Oxinitride
TEOS
TOMCAT
LTO
HTO
SIPOS
Low pressure deposition of passivation

PECVD Processes:
PECVD-Oxide
PECVD-Nitride
PECVD-Oxinitride

Features and Benefits of the Centrotherm E2000:

1. Up to 4 stacked quartz or SiC tube reactor chambers (Up to 300 mm 4 stack is possible).
2. Process selectable chamber options available.
3. Fully automated cassette-to-cassette loading for processing up to 200 mm wafers.
4. Advanced water cooling system: no thermal interference between different tubes, with no consumption of clean room air.
5. Clean automated boat loading for premium processing of up to 200 mm wafers.
6. Modular component design for ease of installation and start up in clean room facilities.

Technical Data

Possible Wafer sizes:  150 mm [max. 200 wafers] 200 mm [max. 150 wafers] 300 mm [max. 75 wafers]
Heating System: 3 or 5 zone 900 mm to 1000 mm flat zone ± 0.5 °C across flat zone
Process temperature: 200 °C to 1300 °C
Possible process gases:  H 2 , Ar, O 2 , N 2 O, N 2 , SiH 4 , NH 3 , B 2 H 6 , PH 3 , SiH 2 Cl 2
Power consumption: 95 kW [heating cassette with Ø 290 mm at 1000 °C]
Power supply 400 V, 140 A [system will be modified to country-specific power supply]
Dry air 600 – 1000 kPa
Cooling water 50 – 70 LPM
Exhaust 200 m 3 /h per tube

Options
Boat elevator and wafer handling automation

Dimensions (WxHxD): 240x270x145


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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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