SFI Endeavor AT PVD cluster tool for Sale

SDI fabsurplus.com is pleased to announce the availability of the following listed used SFI Endeavor AT PVD cluster tool.
Please click on the "Get Quote" button at the end of the Endeavor AT description, if you'd like to get a quotation, photos and specifications of this PVD cluster tool, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This SFI Endeavor AT PVD cluster tool is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.

SFI Endeavor AT Equipment Details

SDI ID: 106516
Manufacturer: SFI
Model: Endeavor AT
Description: PVD cluster tool
Version: 150 mm
Vintage: Inquire
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire

This tool has been professionally de-installed and moved to the warehouse.

We have just done a virtual inspection of this equipment.

I have uploaded this virtual inspection to our youtube channel, and you can see the video at the following link:-


De-installed by the OEM . In working condition. Warehoused. Can be inspected by appointment.

PM2 Al
PM3 Cu
PM5 Ti

1. These tools have been upgraded to the model Endeavour AT type from Endeavour 8600 type.
2. The difference between them is Endeavour 8600 has RF Diode controlled sputtering, whereas the newer Endeavour AT model has RF S-Gun magnetron controlled sputtering, along with optional Infrared substrate heaters.
3.The main design features of the system include:-
a. Sputter up deposition with gravity retaining. No clips or clamps needed.
b. S-Gun magnetron advanced DC source.
4. You can run a receipe on the wafer with up to 50 steps with different parameters for sputtering.
5. Each wafer loaded can be run through a different sequence of sputtering.
6. The S-Gun magnetron sputtering system has the following design features.
Plasma is produced in the chambers in 2 concentric rings. One for each magnetron and target. Between them, there is the shield region.
Sputtering happens if you have ions and you have bombardments. There is no plasma in the shield region, so , no sputtering of this section takes place.
At the edge areas of the targets,material is not sputtered. Material is actually deposited there.
The sputtering volume is small due to the chamber design. The magnets are designed so as the sputtering will occur only over the centers of the areas where the targets are located.Magnet design is made in a way that the flux lines are only above the target areas. Electrons will then bounce between these 2 negative points of the target and a plasma will be formed inside this region.
Hence, there are 5 sources of energy which can be applied to the wafer. By adjusting the parameters of these 5 energy sources, you can adjust the grown film's characteristics e.g. grain size , film stress etc. etc.
7. Material analysis found no significant contamination in the material of the sputtered films.
8. The optional substrate IR heater is a quartz lamp. 2 concentric lamps. They will heat wafer up to 500c within 1 minute.

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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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