FOUR DIMENSIONS CV92A Semi Auomatic Mercury Probe CV Plotter for Sale

SDI fabsurplus.com is pleased to announce the availability of the following listed used FOUR DIMENSIONS CV92A Semi Auomatic Mercury Probe CV Plotter.
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This FOUR DIMENSIONS CV92A Semi Auomatic Mercury Probe CV Plotter is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.

FOUR DIMENSIONS CV92A Equipment Details

SDI ID: 108817
Model: CV92A
Description: Semi Auomatic Mercury Probe CV Plotter
Version: up to 200 mm
Vintage: 01.06.1998
Quantity: 1
Sales Condition: inquire
Lead Time: immediately
Sales Price: Inquire

FOUR DIMENSIONS CV92A Semiautomatic CV Plotter
    • Mercury Probe for Substrates from 5mm X 5mm to 200mm Wafers
    • Dose Monitoring for Silicon and GaAs Wafers
    • Wafer Mapping up to 49 Test Points
    • System Control Computer
    • SN WP586061219
    • 4D Application SW Version 1.28
    • Windows 2000 Professional OS, CD-ROM, FDD, Flat Screen Monitor, Keyboard & Mouse
    • Embedded Computer
    • SN WP061220
    • FDD Flat Screen Monitor, Keyboard
    • 115V, 1Ph., 60 Hz, 16A
Functional Description
1.1 Introduction
The CVmap 92A/92B instrument uses a mercury probe to make contact to the semiconductor samples for C-V, I-V and other measurements, such as wafer doping density profiling, Oxide integrity monitoring, carrier generation lifetime. The entire system includes a CVmap 92A/92B instrument, a Four Dimensions' 586 computer, a SVGA monitor, and a printer. The unique design of the CVmap instrument enables the operator to perform variety measurements with repeatable and reliable results. The measurements are controlled through a computer program, and a precision automatic wafer handling mechanism. The system can handle samples with size as small as 5 mm by 5 mm and up to 12 inches in diameter. The measurement data are analyzed based on the test program setup, and used for plotting analysis curves and/or making wafer maps. Also an external probe can be connected to a CVmap instrument for C-V or I-V measurements at an external probe station. External meters that perform measurements using sine wave at 1 MHz, such as Keysight E4980A, can also be connected to the CVmap instrument, and controlled by the system computer through IEEE 488 interface. Measurements at various sine wave frequencies are also possible. In order to assist the users to perform further analysis
on the obtained data, the system software includes the function to transfer measurement and analysis data to other computers.
Unlike traditional C-V measurement setup, which puts several instruments together through interconnection cables, the CVmap 92A/92B consists of several modules and all are in one well-constructed enclosure. The signal integrator and generators are put right next to the wafer-under-test, thus minimizes stray capacitance and interference. Instead of using sinusoidal wave as test signal, the Model CVmap 92A/92B series uses precision, millivolt pulses generated by one of the function generators as the test signal and an integrator as the sensor for capacitance measurements. This allows the measurement to MOS capacitance being insensitive to the series resistance.
Using mercury probe has the advantage to eliminate the gate forming process that is necessary to traditional C-V measurements. Because mercury is a hazard material to human health and environment, mercury safety is the most considered issue for the implementation of the CVmap instrument. Four Dimensions' design of the mercury probe/reservoir/collector assembly ensures the safe and reliable operation of the CVmap system. Both TXRF and TOF SIMS cannot detect any trace of mercury on the spot that has been contacted a few times by a mercury probe. There are several special designed mercury probes for different kinds of applications. A probe can be configured to have a mercury dot, a mercury dot and a mercury ring, or a mercury dot and two mercury rings. The mercury contact area of each kind of probe is also controlled for different measurements. The unique design of the mercury probes enables the contact area of a mercury probe very repeatable.
The CVmap 92A/92B not only can perform variety semiconductor wafer characterizations, but also can do them well. They are:
    (1) Low dose ion implant, epitaxial layer and raw wafer doping density profiling and mapping
    (2) Oxide integrity monitoring including Time Dependent Dielectric Breakdown (TDDB), Charge to Breakdown (Qbd), Density of Interface Traps (Dit), Oxide resistivity and thickness or dielectric constant
    (3) Determining carrier generation lifetime
    (4) Semi-insulating substrate resistivity measurement
    (5) Using pseudo MOST technique to characterize Silicon On Insulator (SOI)
Test results show that the CVmap 92A/92B instrument can easily resolve 2.5% variation of low dose ion implant, and detect energy noises, measure carrier generation lifetime from 10-8 to more than 10-1 second for just about all kinds of samples. And results can be used to determine whether a cleaning procedure or a furnace is clean enough by testing TDDB and generation lifetime.
1.2 System Specifications
    1. Wafer size: 1-inch to 12-inch wafers typical (8-inch for 92A/92B), sample size can be as small as 5mm x 5mm
    2. Polar or Cartesian mapping up to 49 sites with edge exclusion up to 1.5 mm
    3. MOS Doping Profiles:
Dope: 8 x 1012 to 5 x 1018 ions/cm3 Depth: 0 to 10 Microns.
Repeatability: ±1.5% typical
    4. Interface Trap Density (DIT)
Range: 2 x 1010 states/cm2 to 2 x 1012 states/cm2
Repeatability: ±5% or ±1010 states/ cm2 whichever is larger
    5. Oxide Thickness Range: 24A to 20,000A by C-V method, 15A to 30A by I-V method
    6. Ion Implant Dose
Range: 1 x 1011 to 5 x 1012 ions/cm2 Repeatability: ±1% typical
    7. Epitaxial Doping Density
Range: 1 x 1014 to 1 x 1018 cm-3 Repeatability: ±2% typical
    8. Epitaxial Thickness
Range: 0.3 to 3 microns Repeatability: ±3% typical
    9. Generation Lifetime
Range: 0.01us to 100ms Repeatability: ±10% typical
    10. Insulating Film and Semi-Insulating Layer Resistivity Range: 1 x 106 to 1 x 1016 Ohm-cm in 30A to 1 mm thickness
    11. Current range: 50 fA to 1 mA
    12. Bias voltage: -100 to 100 Volts
    13. Measurement pulse: 50mV, 100 mV, or 150 mV, > 20us for Ch, >lms for Cq
    14. Probe: mercury dot only, mercury dot and one mercury ring, mercury dot with two mercury ring or external
    15. Compressed Air: 60Psi at 1.5 liter per minute maximum flow
    16. Vacuum: 28-inch Hg minimum at 0.5 liter/min maximum flow
1.3 Operation Features
The system software consists of six main parts:
    (1) The basic software has programs for measuring quasi-static, high frequency and deep pulsed C-V, displaying the curves, generating maps and storing data.
    (2) The program that uses C-V curves to determine doping profile and dosage of low dose implantation, epi and raw wafer.
    (3) The program that determines gate Oxide TDDB and Qbd, obtains Oxide I-V curves, checks the trap densities, and maps Oxide thickness.
    (4) The generation lifetime program that obtains carrier generation lifetime at different depth through measuring generation current at different biases.
    (5) The program for GaAs which maps dosage of epi and ion implantation; it also maps semi-insulating layer resistivities.
    (6) The program using psuedo MOST technique to characterize SOI.
1.4 System Composition
The system hardware mainly consists of:
    (1) The CVmap 92A/92B mercury instrument and its attachments that include hoses for vacuum, compressed air and N2
    (2) The system computer, a monitor, a printer, and a RS-232 cable for the communication between the CVmap instrument and the system computer.
    (3) Mercury Spill Control Station
    (4) Optional needle probe station for probing at pads.
1.5 Models and Options
The software included with any CVmap system has the basic operation features listed below. The customers have the choice to purchase other software modules to meet their own measurement requirements. The software modules are listed in the table below:


Functions Modules

Measurement Parameter Selections

Analysis Parameters Selections

Wafer Analysis Selections

Graph Selections


Control Parameters

Sweep Cq-Ch parameters Quasi-static parameters High frequency parameters Sweep Cd parameters

Deep pulse parameters


Tox, Eox, Area Misc

Tox Cox K

Ch vs Vgs Cq vs Vgs Both Cq and Ch vs Vgs

Oxide integrity (optional)

IV sweep parameters I parameters

Qbd parameters

Resistance parameters Vbd parameters

Vgs shift parameters

Mobile ion

V at specified I

Qbd Vbd Tbd at specified Vox

Nss difference

Dit at Cq low

Leakage current histogram

Full range Dit vs Et I vs V

R vs V

Tbd vs Vox

Qbd vs PF

Vgs vs C for Nss

Dose monitor (optional)



Doping Profile Dose monitor Doping Average



N at specified W P dose monitor

W at specified N Vgs at specified N Doping

W vs N

Lifetime (optional)

Lifetime Qt sweep parameters


Tg lifetime Seff

Lifetime I-Ch



Pseudo MOST I-V sweep parameters

Pseudo MOST I-V

Dit at burried Oxide interface

Mobilities at burried Oxide interface

Pseudo MOST I-V

Id vs Vg Id vs Vd gm vs Vg Id (Igmi)1,2 Vg


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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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