ESEC 2008-XP Die Bonder for Sale

- INCLUDES THE FOLLOWING OPTIONS:

- DA, ED 111

- TYPE D160

Die Bonder 2008 xP / 2008 xP3
 D160.0001 / D160.0003
The expandable Die Bonding System
 from
 High Speed to High End Applications
Net productivity:
 up to 8000 UPH ( depending on configuration, m
aterial and specifications)
Accuracy XY and theta:
with Optical Bond Centering
Die size
3
σ 1σ Cp for range
10m
m
/
400 m
ils 8.3
 μm
*
0.08° * 2.0*
2.0* ±50 μm
±0.5°
0.16° * 2.0* ±0.96° *
without Optical Bond Centering
Die size
3
σ 1σ Cp for range
10m
m
/
400 m
ils 3
7.5 μm
0.3
75° 12.5 μm
0.125° 1.3
3
1.3
3
 ±50 μm
±0.5°
2m
m
/
80 m
ils 0.6° 0.2° 1.3
3
 ±0.8°
25 μm
*
0.25° *
2m
m
/
0.48° *
80 m
ils
(*depending on process setup)
• Bondtim
e:
0 to 3
2 sec (program
m
able)
• Bondforce:
 0.5 N to 15 N (program
m
able)
Buffer Capacity:
Top Stack Loader Wide (TOS-W)
• leadfram
e width
up to 90 m
m
/ 3
.5"):
3
 m
agazines
one m
agazine m
ay
be used to deposit
interleaves and
rejected leadfram
es
Useable m
agazine height:
 100 m
m
 / 3
.95"
Magazine Handler (MH)
Loading platform
 depth:
 3
00 m
m
 / 11.8"
Unloading platform
 depth:
 43
0 m
m
 / 16.9"
Material Handling Features:
Paper separation
Autom
atic bin switching (TOS-W)
Leadfram
e thickness check
Warning if bin is alm
ost em
pty
Leadfram
e orientation:
 Verification of correct
hole pattern along the leadfram
e edgePick Vision:
System
:
 Solid State cam
era
Resolution:
 512 x 512 pixels
Wafer table:
High speed closed loop
system
• Positioning m
ethod:
Pattern or saw cut
alignm
ent
• Tim
e to convert
PVM to new die
when using recipe:
< 1 m
in.
Tim
e to learn new die
and store into recipe:
< 3
 m
in.
Miscellaneous:
Size (w x d x h):
TOS-MH:
 1150 x 1280 x 1750 m
m
MH-MH:
 13
45 x 1280 x 1750
Weight:
 660 kg
Electrical:
 110v, 220 v +10% -15%, 50/60 Hz
Com
pressed air:
 4 to 6 bar / 60 to 90 psi
Nitrogen (for bond
blow if required):
 1.8 to 3
 bar / 25 to 45 psi
Vacuum
 m
in.:
 -75 kPa / -0.75 bar
-22 Hg / -75%