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LAM Research VECTOR Express™ PE CVD System for Sale


SDI fabsurplus.com is pleased to announce the availability of the following listed used LAM Research VECTOR Express™ PE CVD System.
Please click on the "Get Quote" button at the end of the VECTOR Express™ description, if you'd like to get a quotation, photos and specifications of this PE CVD System, and your request for this equipment will be forwarded to our SDI sales representatives automatically.
This LAM Research VECTOR Express™ PE CVD System is available for immediate sale.
Crating, refurbishment and delivery for this equipment can be quoted on request.


LAM Research VECTOR Express™ Equipment Details

SDI ID: 98612
Manufacturer: LAM Research
Model: VECTOR Express™
Description: PE CVD System
Version: 300 mm
Vintage: 01.05.2007
Quantity: 1
Sales Condition: as is where is
Lead Time: immediately
Sales Price: Inquire
Comments:

The equipment has been professionally de-installed, and inspection of the equipment is welcomed by appointment in the warehouse.
For details about the tool's condition please refer to the attached photos.

VECTOR Express™ is a 300 mm plasma-enhanced chemical vapor deposition (PECVD) system. Designed for thin film process at 45nm node and beyond.
It has the SmartSoak™ processing feature. SmartSoak uses the multi-station sequential processing (MSSP) architecture to control wafer heat-up independently from film deposition. This gives more stable and consistent wafer temperature at the start of film deposition and reduces thin film processing time.

Performance at 0.08µm particle size for a 500Å TEOS oxide process: Thin film thickness control is better than one atomic layer on a 40Å silane spacer oxide process.

The tool reduces the number of deposition zones to actually increase the system throughput for thin films. With >70% of the 45nm dielectric PECVD for logic (see figure, above) and >50% for DRAM being <100nm thin, the time spent in deposition itself can be less than the handling or heat up. Thus, the first of the four sequential stations in the system has been converted to allow for "smart-soak" temperature stabilization.
For films such as a silicon nitride layer, processing throughput is dominated by the deposition time itself. For ultra-thin films, such as 10nm-20nm of TEOS-based oxide, the deposition time in each of the three stations is only 3-5 sec, but it takes 10sec to first heat the wafer up to deposition temperature.

Defects and thickness uniformity both improve with extended soak-times — for example, increasing soak-time 4X over a nominal baseline reduces particles >0.12µm to the single single-digit range. The soak-time ensures temperature uniformity, and also allows for outgassing from lower dielectric layers, to ensure good adhesion of a SiC dielectric cap on top of a low-k dielectric for example.

The tool has an improved liquid delivery system giving faster processing times.
It also has improved handling hardware, including lift-pins, pedestals, gate-valves, and pumps which can be field-retrofittable, and the faster handling results in >10% claimed greater throughput over vector platform.

Gases used:
Argon
Nitrogen
Oxygen
Silane
Nitrogen Trifluoride
Nitrous Oxide
Hydrogen
Helium
Ammonia, Anhydrous
Argon
Acetylene gas


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The data provided herein is not an offer capable of acceptance.
The information contained on this page is, to our knowledge and information, accurate, but it may contain errors and therefore we do not warrant the completeness or accuracy of the information contained on this page.
Any offer by you to purchase the equipment described on this page shall be subject to our standard terms and conditions of sale.

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