TEL Tokyo Electron NT333 ALD (Atomic Layer Deposition) for Sale

-STILL OPERATIONAL AND RUNNING WAFERS IN THE CLEANROOM

-WILL BE MADE AVAILABLE FOR REMOVAL IN SEPTEMBER, 2025

The TEL Model NT333™ is a semi-batch type of ALD (Atomic Layer Deposition) system. It allows thin film thickness control at a precise level whilst giving good film quality and high productivity.
It uses spatial ALD method rather than time divided ALD. Multiple wafers can be processed together within each chamber. The chamber is divided into different sections enabling simultaneous exposure to and adsorption of precursors and other reactants continuously by substrate rotation. One ALD cycle is performed upon each rotation of the wafer stage. High productivity ALD can now be done by high stage rotation speeds along with an optimized gas delivery system in well isolated reaction zones.

It is possible for pre or post treatment steps included in each ALD cycle, forming films of the high quality while operating at low temperatures and providing tunable film stresses for many applications.
It has a plasma shield which reduces plasma damage resulting in high quality films when at high stage rotation speeds.