Please find below a list of used ALD (Atomic Layer Deposition) semiconductor manufacturing equipment for sale by fabsurplus.com . Click on any listed item of used ALD equipment to see further data.Atomic Layer Deposition (ALD) is a technique used in semiconductor device manufacturing to deposit high quality thin films of materials on semiconductor substrates. ALD recently became popular and has been used below the 45 nm node in semiconductor device manufacturing, due to it allows a very precise and uniform deposition of materials at an atomic scale, allowing advanced semiconductor devices with superior performance to be made. There are two types of ALD: Thermal ALD and Plasma Enhanced ALD. Thermal ALD is a binary process with two reactants A and B. The first reactant A is pumped into the ALD chamber. The wafer is processed and then the chemistries are purged. Then, reactant B undergoes the same step. In plasma-enhanced ALD, the reactions are plasma-based, a method used by low-temperature applications. ALD tools can be furnace/batch, single-wafer, and spatial-based.
| SDI ID | Manufacturer | Model | Description | Version | Vintage | Q. ty | Sales Conditions | Lead Time | |
|---|---|---|---|---|---|---|---|---|---|
| 111499 | Aixtron | StrataGEM 200 | ALD system with 2 process chambers for Hf02 / Al2O3, and TiN | 200 mm | 01.03.2010 | 1 | as is where is | immediately | |
| 111352 | ASM | Eagle XP5 | Plasma-enhanced ALD system with 2 chambers for SiO and SIN | 300 mm | 01.06.2010 | 1 | immediately | ||
| 114080 | ASM | Eagle XP EmerALD | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | |||
| 115625 | Beneq | TFS 200 | ALD (Atomic Layer Deposition) | 200 mm | 01.06.2017 | 1 | as is where is | immediately | |
| 115781 | Kokusai | Aldinna | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | |||
| 115782 | Kokusai | Aldinna | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | |||
| 115564 | Picosun | Morpher F | ALD (Atomic Layer Deposition) | 200 mm | 1 | as is where is | |||
| 115565 | Picosun | Morpher F | ALD (Atomic Layer Deposition) | 200 mm | 1 | as is where is | |||
| 115566 | Picosun | Morpher F | ALD (Atomic Layer Deposition) | 200 mm | 1 | as is where is | |||
| 108695 | TEL Tokyo Electron | TRIAS | High K Metal CVD and ALD system, NiOx, HfOx process | 300 MM | 01.06.2010 | 1 | as is where is | immediately | |
| 114191 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 01.01.2020 | 1 | as is where is | immediately | |
| 114192 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 01.10.2018 | 1 | as is where is | immediately | |
| 114193 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | immediately | ||
| 116322 | TEL Tokyo Electron | NT333-H1-2A-3A | ALD (Atomic Layer Deposition) | 300 mm | 01.10.2017 | 1 | as is where is | 2 months | |
| 116323 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | immediately | ||
| 116324 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | immediately | ||
| 116325 | TEL Tokyo Electron | NT333-H1-2A-3A | ALD (Atomic Layer Deposition) | 300 mm | 01.06.2018 | 1 | as is where is | immediately | |
| 116326 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | immediately | ||
| 116327 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | immediately | ||
| 116328 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | immediately | ||
| 116329 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | 5 months | ||
| 116330 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | immediately | ||
| 116331 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | 5 months | ||
| 116332 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | 5 months | ||
| 116333 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | 5 months | ||
| 116334 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | 5 months | ||
| 116335 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | 6 months | ||
| 116417 | TEL Tokyo Electron | NT333 | ALD (Atomic Layer Deposition) | 300 mm | 1 | as is where is | immediately | ||
| 116484 | TEL Tokyo Electron | TELINDY PLUS-I-M1 | ALD Batch furnace for SiN process | 300 MM | 01.07.2020 | 1 | as is where is | immediately |