Please find below a list of Used Ion Implanters and Implant Equipment for sale by fabsurplus.com - Click on any listed item of Implanters and Implant Equipment to see further data. The use of accelerated ions to dope and change semiconductors,generally referred to as ion implantation, is a core technology for the fabrication of semiconductor devices.An implanter usually has an ion source, where ions of the desired element are produced, an accelerator, where the ions are electro-statically accelerated to a high energy or using radio-frequency, and a target chamber, where the ions hit the target wafer, which is the material to be implanted.
| SDI ID | Manufacturer | Model | Description | Version | Vintage | Q. ty | Sales Conditions | Lead Time | |
|---|---|---|---|---|---|---|---|---|---|
| 108729 | Axcelis | 110000800 | Universal 300mm Disk Cart MAT # 4501422 | Facilities | 01.06.2005 | 1 | as is where is | immediately | |
| 111465 | Axcelis | 110001747 | UHD refurbished implanter wheel | 200 mm | 1 | as is where is | immediately | ||
| 111466 | Axcelis | 110001747 | UHD used implanter wheel | 200 mm | 1 | as is where is | immediately | ||
| 113718 | AXCELIS | NV-GSD-100 | High Current Implanter, 160 KEV | 150 mm | 01.06.1995 | 1 | as is where is | immediately | |
| 113719 | AXCELIS | NV-GSD-200E2 | High Current Implanter 160 kV | 150 mm | 01.06.1995 | 1 | as is where is | immediately | |
| 113720 | AXCELIS | NV-GSD-200E | High Current Implanter 80KV | 150 mm | 01.06.2006 | 1 | as is where is | immediately | |
| 113721 | AXCELIS | NV-GSD-HE | High Energy Implanter 1.2 MeV | 150 mm | 01.06.2000 | 1 | as is where is | immediately | |
| 113722 | AXCELIS | NV6200AV | Medium Current Implanter | 150 mm | 01.06.1989 | 1 | as is where is | immediately | |
| 113723 | AXCELIS | NV6200AV | Medium Current Implanter | 150 mm | 01.06.1995 | 1 | as is where is | immediately | |
| 114288 | Axcelis | NV-GSD III -90 | high-current ion implanter | 200 mm | 01.06.1995 | 1 | as is where is | ||
| 114289 | Axcelis | NV-GSD-HE | High Energy Ion Implanter | 200 mm | 01.06.1999 | 1 | as is where is | ||
| 114290 | Axcelis | NV-GSD/HE | High Energy Ion Implanter | 200 mm | 01.09.1999 | 1 | as is where is | ||
| 116429 | Axcelis | NV8250HT | Medium Current Implanter | 200 mm | 01.06.2002 | 1 | as is where is | ||
| 116433 | Axcelis | NV-GSD-200E | High Current Implanter, 80 kv | 200 mm | 01.06.2000 | 1 | as is where is | ||
| 93833 | Nissin | Exceed 2000 | Medium Current Ion Implanter | 3, 4 and 5 inch | 01.05.1997 | 1 | as is where is | immediately | |
| 114331 | Nissin | Exceed 2000A | Medium Current Ion Implanter | 200 mm | 01.06.1999 | 1 | as is where is | ||
| 114332 | Nissin | Exceed 2000A | Medium Current Ion Implanter | 200 mm | 01.06.2000 | 1 | as is where is | ||
| 113317 | Ulvac | IH-860DSIC | High-temperature Ion Implanter for SiC | 100 mm | 01.06.2010 | 1 | as is where is | immediately | |
| 113318 | Ulvac | SOPHI-200 | Medium Current Ion Implanter for Thin Wafers | 150 mm | 01.06.2006 | 1 | as is where is | immediately | |
| 109584 | Varian | Vista PLAD | EFEM Unit Only | 300 mm | 01.07.2006 | 1 | as is where is | immediately | |
| 111583 | VARIAN | Viista Plad HVMS (Parts) | Plasma Doping Ion Implanter | 300 mm | 01.06.2016 | 1 | as is where is | immediately | |
| 116457 | Varian | Viision 200 Plus | High Current Ion Implanter | 200 mm | 01.06.1997 | 1 | as is where is |